Infineon IRF640NSPBF
$ 1.76
Obsolete
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Related Parts
InfineonIRF640NSTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
InfineonIRF640NSTRRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
Descriptions
Descriptions of Infineon IRF640NSPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - D2PAK
Transistor MOSFET N Channel 200 Volt 18.6 Amp 3 Pin 2+ Tab D2pak
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 200V, 18A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:18A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:72A; SMD Marking:IRF640NS; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time5.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.16 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance150 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation150 W
Rds On Max150 mΩ
Recovery Time251 ns
Resistance150 mΩ
Rise Time19 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)200 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements