Infineon IRF640NLPBF

Name: Infineon IRF640NLPBF
Brand: Infineon
SKU: IRF640NLPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.15 Ohm; Id 18A; TO-262; Pd 150W; Vgs +/-20V

$ 1.41

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF640NLPBF	0	5	Bulk		1.600	1.410	1.410	1.410	8h
Farnell		IRF640NLPBF	0	1		2.175*	1.584*	1.270*	1.066*	1.066*	18h
Microchip USA		IRF640NL	295	600	Tube				1.429	1.429	11h
Win Source	2	WS-IRF640NL	1,000	12				3.245	2.909	2.909	19h
Worldway Electronics	2	IRF640NL	13,596	7	Tube		0.576	0.558	0.529	0.529	18h

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF640NLPBF.

IHS

Datasheet11 pages15 years ago

Newark

Factory Futures

Farnell

iiiC

Inventory History

3 month trend:

-100%

CAD Models

Download Infineon IRF640NLPBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-12-31

LTD Date2024-06-30

Related Parts

InfineonIRF9540NLPBF

IRF9540NLPBF P-channel MOSFET Transistor, 23 A, 100 V, 3-Pin TO-262

Details

InfineonIRFSL4620PBF

200V Single N-Channel HEXFET Power MOSFET in a TO-262 package

Details

InfineonIRFZ44NLPBF

Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262

Details

InfineonIRF540NLPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2

Details

InfineonIRF5305LPBF

-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

Details

VishayIRF740ALPBF

Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - TO-262

Details

Descriptions

Descriptions of Infineon IRF640NLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-262-3

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Semicontronic

N CHANNEL MOSFET, 200V, 18A, TO-262; Tra; N CHANNEL MOSFET, 200V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon