Infineon IRF640NLPBF
$ 1.41
Obsolete
Price and Stock
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Inventory History
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CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-09
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
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MOSFET N-CH 55V 49A TO262 "N-Channel 55 V 49A (Tc) 3.8W (Ta), 94W (Tc) Through Hole TO-262"
InfineonIRF540NLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2
InfineonIRF5305LPBF
MOSFET P-CH 55V 31A TO262 "P-Channel 55 V 31A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262"
Descriptions
Descriptions of Infineon IRF640NLPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-262-3
MOSFET N-CH 200V 18A TO262 N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-262
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
N Channel Mosfet, 200V, 18A, To-262; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF640NLPBF
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time5.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.16 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance150 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation150 W
Rds On Max150 mΩ
Resistance150 mΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)200 V
Dimensions
Height15.01 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements