Infineon IRF540NLPBF

Name: Infineon IRF540NLPBF
Brand: Infineon
SKU: IRF540NLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-262; Pd 130W; Vgs +/-2

$ 1.321

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Rochester Electronics		IRF540NLPBF	22,000					0.882	0.732	0.653	2d
RS (Formerly Allied Electronics)		IRF540NLPBF	0	10	Bulk		2.170	1.910	1.910	1.910	10h
Farnell		IRF540NLPBF	0	1		1.947*	1.450*	1.397*	1.191*	1.167*	21h
Microchip USA	2	IRF540NL	245	600	Tube				3.216	3.216	13h
Verical		IRF540NLPBF	22,000	341					0.915	0.816

Inventory History

3 month trend: -0.27%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF540NLPBF.

Farnell

Datasheet11 pages22 years ago

Datasheet11 pages20 years ago

Newark

IHS

RS (Formerly Allied Electronics)

DigiKey

Inventory History

3 month trend:

-0.27%

CAD Models

Download Infineon IRF540NLPBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA		3D	Download
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

InfineonIRF540NLPBF

Price @ 1000

$ 1.321

Stock

245,475

Authorized Distributors

Mount

Through Hole

Case/Package

TO-262-3

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

33 A

Threshold Voltage

4 V

Rds On Max

44 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

130 W

Input Capacitance

1.96 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-04-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Related Parts

InfineonIRF540ZLPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-262;PD 92W;VGS +/-20

Details

InfineonIRF9540NLPBF

IRF9540NLPBF P-channel MOSFET Transistor, 23 A, 100 V, 3-Pin TO-262

Details

InfineonIRF5210LPBF

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V

Details

onsemiFDI150N10

PowerTrench® MOSFET, N-Channel, 100V, 57A, 16mΩ

Details

Descriptions

Descriptions of Infineon IRF540NLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-262-3

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N CHANNEL MOSFET, 100V, 33A, TO-262; Tra; N CHANNEL MOSFET, 100V, 33A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 33 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130

Distrelec