Infineon IRF540ZLPBF

Name: Infineon IRF540ZLPBF
Brand: Infineon
SKU: IRF540ZLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 21MILLIOHMS; Id 36A; TO-262; Pd 92W; Vgs +/-20

$ 0.651

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRF540ZLPBF	17,495					0.784	0.651	0.580	2d
RS (Formerly Allied Electronics)		IRF540ZLPBF	0	3200	Bulk					3.830	11h
Farnell		IRF540ZLPBF	8,212	1		6.027*	5.933*	5.825*	5.611*	5.503*	22h
Microchip USA		IRF540ZLPBF	1,638	3K	Tube					0.784	14h
Verical	2	IRF540ZLPBF	16,468	383					0.813	0.725

Inventory History

3 month trend: -2.28%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF540ZLPBF.

IHS

Datasheet12 pages15 years ago

Datasheet13 pages15 years ago

Datasheet12 pages15 years ago

DigiKey

RS (Formerly Allied Electronics)

Newark

Inventory History

3 month trend:

-2.28%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2002-05-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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InfineonIRF540NLPBF

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Descriptions

Descriptions of Infineon IRF540ZLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-262;PD 92W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 100 V 26.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262

Future Electronics

MOSFET N-CH 100V 36A TO262 / N-Channel 100 V 36A (Tc) 92W (Tc) Through Hole TO-262

Win Source

100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:36A; On Resistance, Rds(on):26.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon