Infineon IRF5210LPBF

Name: Infineon IRF5210LPBF
Brand: Infineon
SKU: IRF5210LPBF

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.06 Ohm; Id -40A; TO-262; Pd 200W; Vgs +/-20V

$ 3.01

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF5210LPBF	0	5	Bulk		3.420	3.010	3.010	3.010	17h
Farnell		IRF5210LPBF	0	1		4.496*	3.570*	3.181*	3.181*	3.181*	3h
Microchip USA		IRF5210L	375	600	Tube				1.789	1.789	20h
Win Source	2	WS-IRF5210LPBF	20	14				3.156	2.829	2.829	4h
Worldway Electronics	2	IRF5210LPBF	10,273	7	Tube		1.100	1.066	1.010	1.010	2h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF5210LPBF.

Farnell

Datasheet11 pages16 years ago

IHS

Newark

element14 APAC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+0.00%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-06-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2009-08-19

LTD Date2010-02-19

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Descriptions

Descriptions of Infineon IRF5210LPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V

RS (Formerly Allied Electronics)

Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - TO-262-3

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-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

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Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

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MOSFET, P, 100V, 40A TO262; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-262AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-40A; Package / Case:TO-262AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:140A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon