Infineon IRF5305PBF

Name: Infineon IRF5305PBF
Brand: Infineon
SKU: IRF5305PBF

Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.06 Ohm; Id -31A; TO-220AB; Pd 110W; Vgs +/-20V

$ 0.555

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	IRF5305PBF	2,775	50				0.444	0.424	0.424	1d
Newark	2	IRF5305PBF	6,365	1		1.900	0.966	0.850	0.627	0.597
Future Electronics	2	IRF5305PBF	60,835	50	Tube			0.580	0.565	0.520
Arrow Electronics	3	IRF5305PBF	20,881	1		0.926	0.926	0.823	0.583	0.484
Rochester Electronics		IRF5305PBF	2,055					0.689	0.572	0.510	23h

Inventory History

3 month trend: -4.23%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF5305PBF.

Newark

Datasheet9 pages22 years ago

IHS

Sierra IC

Farnell

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-4.23%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-07-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

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Descriptions

Descriptions of Infineon IRF5305PBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;TO-220AB;PD 110W;VGS +/-20V

RS (Formerly Allied Electronics)

Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-220AB Tube

Verical

277.8W 20V 4.5V@1.3mA 63nC(Max) @ 10V 1P 650V 110m¦¸@ 10V,12.7A 31.2A 1.2nF@ 25V TO-220

UnikeyIC

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: P Power dissipation: 110 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

P Channel Mosfet, -55V, 31A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF5305PBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon