Infineon IRF1018EPBF

Name: Infineon IRF1018EPBF
Brand: Infineon
SKU: IRF1018EPBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 7.1MILLIOHMS; Id 79A; TO-220AB; Pd 110W; -55DEG

$ 0.635

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3 month trend: +65.19%

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Official Datasheet3 years ago

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+65.19%

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-28

Lifecycle StatusProduction (Last Updated: 2 months ago)

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Descriptions

Descriptions of Infineon IRF1018EPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg

RS (Formerly Allied Electronics)

Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W

Distrelec

Power MOSFET Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-220; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Infineon