Infineon IRFB7546PBF

Name: Infineon IRFB7546PBF
Brand: Infineon
SKU: IRFB7546PBF

60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

$ 0.412

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark		IRFB7546PBF	460	1		1.620	0.789	0.769	0.592	0.559
Arrow Electronics	2	IRFB7546PBF	10	1		0.388	0.388	0.388	0.388	0.388
Rochester Electronics		IRFB7546PBF	901					0.461	0.382	0.341	22h
DigiKey		IRFB7546PBF-ND	1,545	1	Tube	1.460	1.460	0.611	0.436	0.436
RS (Formerly Allied Electronics)		IRFB7546PBF	0	50	Bulk			1.460	1.280	1.280	14h

Inventory History

3 month trend: -41.34%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB7546PBF.

Newark

Datasheet11 pages11 years ago

Datasheet10 pages12 years ago

IHS

Inventory History

3 month trend:

-41.34%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-01-16

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFB7546PBF provided by its distributors.

60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 60 V 7.3 mOhm 87 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

TUBE / MOSFET, 60V, 75A, 7.3 mOhm, 58nC, TO-220

Newark

Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-220AB Tube

Verical

MOSFET, 60V, 75A, 7.3 MOHM, 58 NC QG, TO-220AB

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W

Distrelec

Power Field-Effect Transistor, 75A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N CH, 60V, 75A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V;

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Infineon