Infineon IRF1010NSTRLPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V

Single N-Channel 55V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 85 A, TO-252-3, IRF1010NSTRLPBF

Trans MOSFET N-CH 55V 85A 3-Pin(2+Tab) D2PAK T/R

MOSFET, N-CH, 55V, 85A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 180W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:85A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:180W ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 85 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 11 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 76 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 180