STMicroelectronics STB80NF55-08T4
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB80NF55-08T4.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.252
Stock
159,178
676,794
Authorized Distributors
0
3
Mount
Surface Mount
-
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
80 A
80 A
Threshold Voltage
3 V
-
Rds On Max
8 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
300 W
300 W
Input Capacitance
3.85 nF
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2017-10-19
LTD Date2018-04-19
Related Parts
STMicroelectronicsSTB85NF55T4
STB85NF55T4 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin D2PAK
InfineonIRL2505STRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;D2Pak;PD 200W;VGS +/-16V
Descriptions
Descriptions of STMicroelectronics STB80NF55-08T4 provided by its distributors.
N-channel 55 V, 0.0065 Ohm typ., 80 A STripFET Power MOSFET in a D2PAK package
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Mosfet, N, D2-Pak; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:16V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W Rohs Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.85 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation300 W
Rds On Max8 mΩ
Resistance8 mΩ
Rise Time85 ns
Threshold Voltage3 V
Turn-Off Delay Time75 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)55 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB80NF55-08T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant