Infineon IRF3205SPBF

Name: Infineon IRF3205SPBF
Brand: Infineon
SKU: IRF3205SPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V

$ 2.76

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF3205SPBF	0	550	Bulk				2.760	1.630	16h
Farnell	IRF3205SPBF	0	5			1.048*	0.915*	0.757*	0.730*	2h
Win Source	WS-IRF3205SPBF	361,820	115					0.404	0.404	3h
Worldway Electronics	IRF3205SPBF	18,193	7	Tube		0.140	0.136	0.129	0.129	2h
IC Components Ltd.	IRF3205SPBF	13,533			8.310	8.310	8.310	8.310	8.310	3d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3205SPBF.

Newark

Datasheet11 pages22 years ago

element14 APAC

RS (Formerly Allied Electronics)

iiiC

DigiKey

CAD Models

Download Infineon IRF3205SPBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-11-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Related Parts

InfineonIRF3205STRLPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V

Details

InfineonIRF3205STRRPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V

Details

InfineonIRF1010NSPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V

Details

STMicroelectronicsSTB141NF55

Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R

Details

STMicroelectronicsSTB200NF04T4

STB200NF04T4 N-channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK

Details

Descriptions

Descriptions of Infineon IRF3205SPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;D2Pak;PD 200W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK Tube

Verical

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 200 W

Distrelec

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, 55V, 110A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:110A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation on 1 Sq. PCB:3.7W; Pulse Current Idm:390A; SMD Marking:IRF3205S; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC