Infineon IR2308PBF

600 V half-bridge gate driver IC with shoot through protection, PDIP8, RoHS

Tube IR2308PBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 1W

Driver 600V 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin PDIP Tube

High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-Lead package

DRIVER, MOSFET, HI VOLT, 2308, DIP8; Driver Configuration:Half Bridge; Peak Output Current:350mA; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:DIP; No. of Pins:8Pins; Input Delay:220ns; Output Delay:

DRIVER, MOSFET, HI VOLT, 2308, DIP8; Driver IC Type:MOSFET; No. of Outputs:2; Voltage, Output:620V; Output Current:200mA; Power Dissipation Pd:1W; Voltage, Supply Min:10V; Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Base Number:2308; IC Generic Number:2308; Logic Function Number:2308; Max Output Current +:250mA; Temp, Op. Max:125°C; Temp, Op. Min:-40°C; Termination Type:Through Hole; Voltage, Offset:600V; Voltage, Output Max:20V; Voltage, Output Min:10V; Voltage, Supply Max:20V; Min Output Sink Current:250mA; Min Output Source Current:120mA; Voltage, Vcc Max:20V; Voltage, Vcc Min:10V

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V and 15 V input logic compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Outputs in phase with inputs; Logic and power ground +/- 5 V offset.; Internal 540ns dead-time; Lower di/dt gate driver for better noise immunity