Infineon IPT015N10N5ATMA1

Name: Infineon IPT015N10N5ATMA1
Brand: Infineon
SKU: IPT015N10N5ATMA1

Power MOSFET, N Channel, 100 V, 300 A, 0.0013 ohm, HSOF, Surface Mount

$ 3.032

Production

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Distributor		SKU		Min	Pkg
Avnet	2	IPT015N10N5ATMA1	274,000	2K						2.570	13h
Newark	2	IPT015N10N5ATMA1	3,416	1	Cut Tape	2.820	2.820	2.820	2.820	2.820
Future Electronics	2	IPT015N10N5ATMA1	6,000	2K	Tape & Reel					2.820
Rutronik		TMOSP12810	6,000	2K						2.880	19h
Arrow Electronics	2	IPT015N10N5ATMA1	849	1		6.205	4.043	3.278	3.043	3.043

Inventory History

3 month trend: +10.26%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPT015N10N5ATMA1.

IHS

Datasheet11 pages0 years ago

TME

Burklin Elektronik

Inventory History

3 month trend:

+10.26%

CAD Models

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Supply Chain

Country of OriginAustria, Germany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-12-17

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPT015N10N5ATMA1 provided by its distributors.

Power MOSFET, N Channel, 100 V, 300 A, 0.0013 ohm, HSOF, Surface Mount

EBV Elektronik

Trans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R

Verical

100V 300A 375W 1.5m´Î@10V150A 3.8V@250Ã×A N Channel PG-HSOF-8 MOSFETs ROHS

Dasenic

MOSFETs; IPT015N10N5; INFINEON TECHNOLOGIES; 100 V; 32 A; 20 V; 375 W

Maritex

OptiMOSTM 5Power-Transistor,100V, PG-HSOF-8, RoHS

Infineon SCT

375KW 20V 3.8V 169nC@ 10V 1N 100V 1.5m¦¸@ 10V 300A 12nF@ 50V HSOF-8,TO-3P-3L , 9.9mm*10.38m*2.3mm

UnikeyIC

Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, N-CH, 100V, 300A, HSOF;

Farnell

Ideal for high frequency switching and sync. rec

Win Source

Unclassified Tape & Reel (TR) PG-HSOF-8

Utmel Electronic

MOSFETs N-Channel 100V 300A HSOF8

HQonline

Mosfet, N-Ch, 100V, 300A, 175Deg C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:300A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPT015N10N5ATMA1

Newark

Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.

Infineon