Infineon IPT012N08N5ATMA1
$ 3.01
Production
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Inventory History
3 month trend: -6.43%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPT012N08N5ATMA1.
CAD Models
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Supply Chain
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Infineon IPT012N08N5ATMA1 provided by its distributors.
Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R / N-channel, normal level
Power MOSFET, N Channel, 80 V, 400 A, 1.2 mOhm, HSOF, 8 Pins, Surface Mount
MOSFET, N-CH, 80V, 300A, PG-HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Source Voltage Vds:80V; On Resistance
supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -6.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/Package300
MountSurface Mount
Number of Pins8
Number of Terminals2
Technical
Continuous Drain Current (ID)52 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.2 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Manufacturer Package IdentifierPG-HSOF-8
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.2 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation375 W
Rds On Max1.2 mΩ
Rise Time31 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time82 ns
Turn-On Delay Time35 ns
Dimensions
Height2.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPT012N08N5ATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCAffected
RoHSCompliant
Compliance Statements