Infineon IRF7769L2TR1PBF
$ 5.25
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7769L2TR1PBF | 0 | 1K | Bulk | 6h | |||||||
| Farnell | IRF7769L2TR1PBF | 0 | 1 | Cut Tape | 4h | |||||||
| Component Stockers USA | IRF7769L2TR1PBF | 786 | >1wk | |||||||||
| Worldway Electronics | IRF7769L2TR1PBF | 16,548 | 7 | Tape & Reel | 22h | |||||||
| Aztech | IRF7769L2TR1PBF | 15,985 | 2d |
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF7769L2TR1PBF.
CAD Models
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| source | eCAD | mCAD | FILES |
|---|---|---|---|
 SnapEDA | Footprint | Download |
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Descriptions
Descriptions of Infineon IRF7769L2TR1PBF provided by its distributors.
Trans MOSFET N-CH 100V 20A 15-Pin Direct-FET L8 T/R
N CH MOSFET, 100V, 20A DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.7V ;RoHS Compliant: Yes
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 20 amperes optimized for high frequency switching and synchronous rectification applications. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa
MOSFET, N CH, 100V, 124A, DIRECTFET L8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Current Id Max:124A; Power Dissipation Pd:125W; Voltage Vgs Max:20V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
MountSurface Mount
Number of Terminals9
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.56 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.3 W
Rds On Max3.5 mΩ
Resistance3.5 MΩ
Rise Time32 ns
Threshold Voltage2.7 V
Turn-Off Delay Time92 ns
Turn-On Delay Time44 ns
Dimensions
Height508 µm
Length9.144 mm
Width7.1 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF7769L2TR1PBF.
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements