Infineon IPP111N15N3GXKSA1
$ 1.58
Production
Inventory History
3 month trend: +6.31%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPP111N15N3GXKSA1.
CAD Models
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Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-01
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
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Descriptions
Descriptions of Infineon IPP111N15N3GXKSA1 provided by its distributors.
214W 20V 2V 41nC@ 10V 1N 150V 11.1m¦¸@ 10V 83A 3.23nF@ 75V TO-220 10mm*4.4mm*15.65mm
Trans MOSFET N-CH 150V 83A 3-Pin TO-220 Tube
Power Field-Effect Transistor, 83A I(D), 150V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
MOSFET, N-CH, 150V, 83A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 83A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +6.31%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)83 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance11.1 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.23 nF
Max Dual Supply Voltage150 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance11.1 mΩ
Package Quantity500
Power Dissipation214 W
Rise Time35 ns
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time17 ns
Dimensions
Height20.7 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPP111N15N3GXKSA1.
Compliance
Environmental Classification
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements