Infineon IPP075N15N3GXKSA1

Name: Infineon IPP075N15N3GXKSA1
Brand: Infineon
SKU: IPP075N15N3GXKSA1

Trans MOSFET N-CH 150V 100A Automotive 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 150V 100A TO220-3

$ 1.425

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Distributor		SKU		Min	Pkg
Newark		IPP075N15N3GXKSA1	553	1		4.400	2.250	2.030	1.660	1.660
Rutronik		TMOSP10342	50	1					1.420	1.210	19h
Rochester Electronics		IPP075N15N3GXKSA1	50					1.360	1.220	1.140	11h
DigiKey		IPP075N15N3GXKSA1-ND	1,299	1	Tube	4.980	4.980	2.300	1.751	1.518
Arrow Electronics	3	IPP075N15N3GXKSA1	15,885	1		1.538	1.538	1.447	1.304	1.253

Inventory History

3 month trend: +73.96%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP075N15N3GXKSA1.

IHS

Datasheet11 pages15 years ago

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Inventory History

3 month trend:

+73.96%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-05-09

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPP075N15N3GXKSA1 provided by its distributors.

Trans MOSFET N-CH 150V 100A Automotive 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 150V 100A TO220-3

Win Source

Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3

Epart123

TRANSISTOR, OPTIMOS 3 POWER, N-CHANNEL, NORMAL LEVEL, 150V, 100A, TO220

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon

MOSFET, N CH, 100A, 150V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

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