Infineon IPP200N15N3GXKSA1

Name: Infineon IPP200N15N3GXKSA1
Brand: Infineon
SKU: IPP200N15N3GXKSA1

Power MOSFET, N Channel, 150 V, 50 A, 0.016 ohm, TO-220, Through Hole

$ 1.048

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Distributor		SKU		Min
Avnet	2	IPP200N15N3GXKSA1	295	50			0.929	0.887	0.887	3d
Newark	2	IPP200N15N3GXKSA1	1,032	1	3.230	1.700	1.530	1.250	1.250
Arrow Electronics	3	IPP200N15N3GXKSA1	1,713	1	1.029	1.029	1.029	1.029	1.029
Rutronik		TMOSP10307	400	50			1.320	1.055	1.055	4h
Rochester Electronics		IPP200N15N3GXKSA1	1,250				1.440	1.200	1.070	21h

Inventory History

3 month trend: -32.28%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP200N15N3GXKSA1.

IHS

Datasheet12 pages12 years ago

Newark

element14 APAC

_legacy Avnet

iiiC

Inventory History

3 month trend:

-32.28%

CAD Models

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Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-05-09

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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Descriptions

Descriptions of Infineon IPP200N15N3GXKSA1 provided by its distributors.

Power MOSFET, N Channel, 150 V, 50 A, 0.016 ohm, TO-220, Through Hole

EBV Elektronik

OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Win Source

150V 50A 150W 20m´Î@10V50A 4V@90Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

150W 20V 23nC@ 10V 1N 150V 20m¦¸@ 10V 1.82nF@ 75V TO-220 10mm*4.4mm*15.65mm

UnikeyIC

Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon

MOSFET, N CH, 50A, 150V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 50 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150

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