Infineon IPP048N12N3GXKSA1

Name: Infineon IPP048N12N3GXKSA1
Brand: Infineon
SKU: IPP048N12N3GXKSA1

300W 20V 3V 137NC@ 10V 1N 120V 4.8M¦¸@ 10V 100A 9.03NF@ 60V TO-220 10MM*4.4MM*15.65MM

$ 1.816

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Distributor		SKU		Min	Pkg
Newark		IPP048N12N3GXKSA1	65	1		4.560	2.550	2.330	2.300	2.300
Future Electronics	2	IPP048N12N3GXKSA1	500	500	Tube				1.700	1.670
Arrow Electronics	2	IPP048N12N3GXKSA1	325	1		6.384	6.384	3.015	3.015	3.015
DigiKey		IPP048N12N3GXKSA1-ND	131	1	Tube	5.270	5.270	2.489	1.921	1.794
Rochester Electronics		IPP048N12N3GXKSA1	24								3h

Inventory History

3 month trend: -14.49%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP048N12N3GXKSA1.

IHS

Datasheet9 pages15 years ago

iiiC

Inventory History

3 month trend:

-14.49%

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Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-07-16

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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Descriptions

Descriptions of Infineon IPP048N12N3GXKSA1 provided by its distributors.

300W 20V 3V 137nC@ 10V 1N 120V 4.8m¦¸@ 10V 100A 9.03nF@ 60V TO-220 10mm*4.4mm*15.65mm

Unikeyic (ICkey)

Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220

Verical

Power Field-Effect Transistor, 100A I(D), 120V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 120V, 100A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.0041ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

Farnell

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.

Infineon