Infineon IPD110N12N3GATMA1

MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity: N Channel; Continuous Drai
$ 0.93
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD110N12N3GATMA1.

Upverter

Datasheet10 pages15 years ago

IHS

Inventory History

3 month trend:
-6.38%

CAD Models

Download Infineon IPD110N12N3GATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
EE Concierge
SymbolFootprint
Ultra Librarian
SymbolFootprint
Download
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMalaysia, South Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-09
Lifecycle StatusProduction (Last Updated: 1 month ago)

Related Parts

Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK
STMicroelectronicsSTD80N10F7
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in DPAK package
TRANSISTOR, HEXFET POWER MOSFET, N-CHANNEL, 100V , 63A, 13.9MOHM MAX, D-PAK
100V, N-Ch, 11.1 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS
STMicroelectronicsSTD105N10F7AG
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTD85N10F7AG
Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) DPAK T/R

Descriptions

Descriptions of Infineon IPD110N12N3GATMA1 provided by its distributors.

MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drai
Power MOSFET, N Channel, 120 V, 75 A, 0.0092 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 75A I(D), 120V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.
MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPD110N12N3 G
  • IPD110N12N3G
  • SP001127808