Infineon IPD090N03LGATMA1

Name: Infineon IPD090N03LGATMA1
Brand: Infineon
SKU: IPD090N03LGATMA1

N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

$ 0.321

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Distributor		SKU		Min	Pkg
DigiKey	3	IPD090N03LGATMA1CT-ND	91,312	1	Cut Tape	1.120	0.702	0.459	0.321	0.321
Newark	2	IPD090N03LGATMA1	4,307	5	Cut Tape		0.602	0.455	0.404	0.404
Future Electronics	2	IPD090N03LGATMA1	37,500	2500	Tape & Reel					0.210
Arrow Electronics	2	IPD090N03LGATMA1	52,500	2500						0.215
Avnet		IPD090N03LGATMA1	0	2500						0.191	22h

Inventory History

3 month trend: -8.71%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD090N03LGATMA1.

element14 APAC

Datasheet9 pages12 years ago

Datasheet12 pages18 years ago

IHS

Newark

iiiC

Inventory History

3 month trend:

-8.71%

CAD Models

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Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-10-23

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPD090N03LGATMA1 provided by its distributors.

N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

Fly-Wing Technology

MOSFET, N CH, 40A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V;

Farnell

Mosfet, N Channel, 30V, 40A, To-252; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:40A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):0.0075Ohm; Tensión Vgs De Medición Rds(On):10V |Infineon IPD090N03L G

Newark

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

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