Infineon IPD075N03LGATMA1
Transistor MOSFET N-Channel 30V 50A 4-Pin TO-252 T/R
$ 0.42
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Inventory History
3 month trend: -35.47%
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Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-23
Lifecycle StatusProduction (Last Updated: 3 months ago)
Related Parts
InfineonIPD040N03LGATMA1
N-Channel 30 V 90 A 4 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
Descriptions
Descriptions of Infineon IPD075N03LGATMA1 provided by its distributors.
Transistor MOSFET N-Channel 30V 50A 4-Pin TO-252 T/R
Power Field-Effect Transistor, 49A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -35.47%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)49 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance11.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Dual Supply Voltage30 V
Max Operating Temperature175 °C
Max Power Dissipation47 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance7.5 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation47 W
Rds On Max7.5 mΩ
Rise Time3.6 ns
Schedule B8541290080
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Compliance Statements