Infineon IPD053N08N3GATMA1

Power MOSFET, N Channel, 80 V, 90 A, 0.0053 ohm, TO-252 (DPAK), Surface Mount
$ 1.13
Production
Manufacturer PageDatasheet

Price and Stock

See all price breaks
DistributorSKUMinPkg
AvnetIPD053N08N3GATMA15,0002500
4d
NewarkIPD053N08N3GATMA115,3471
Future Electronics
2
IPD053N08N3GATMA12,5002500Tape & Reel
Arrow Electronics
3
IPD053N08N3GATMA14,0881
RutronikTMOS25267,5002500
2h

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD053N08N3GATMA1.

IHS

Datasheet9 pages12 years ago

_legacy Avnet

iiiC

Arrow Electronics

Inventory History

3 month trend:
-1.50%
Powered bySpectra logo

CAD Models

Download Infineon IPD053N08N3GATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
EE Concierge
SymbolFootprint
SnapEDA
Footprint
3DDownload
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginGermany, Malaysia, South Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-25
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2016-04-30
LTD Date2016-10-31

Related Parts

InfineonIPD90N08S405ATMA1
Mosfet, N-Ch, 80V, 175Deg C, 144W Rohs Compliant: Yes |Infineon Technologies IPD90N08S405ATMA1
Details
onsemiFDD86367-F085
MOSFET N-CH 80V 100A DPAK / N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount TO-252AA
Details
InfineonIRFR7540TRPBF
Trans MOSFET N-CH Si 60V 110A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 90A DPAK
Details
InfineonIRFR7540PBF
Single N-Channel 60 V 4 mOhm 86 nC HEXFET® Power Mosfet - TO-252AA
Details
VishaySQD97N06-6M3L_GE3
136W(Tc) 20V 2.5V@ 250¦ÌA 125nC@ 10 V 1N 60V 6.3m¦¸@ 25A,10V 97A 6.06nF@25V TO-252AA 2.38mm
Details
STMicroelectronicsSTD110N8F6
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
Details

Descriptions

Descriptions of Infineon IPD053N08N3GATMA1 provided by its distributors.

Power MOSFET, N Channel, 80 V, 90 A, 0.0053 ohm, TO-252 (DPAK), Surface Mount
EBV Elektronik
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Infineon
Power Field-Effect Transistor, 90A I(D), 80V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Semicontronic
MOSFET, N CH, 90A, 80V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
element14 APAC

Images

RS
iiiC
Augswan
TME
Newark
RS
Future Electronics
LZChips

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPD053N08N3 G
  • IPD053N08N3G
  • IPD053N08N3GBTMA1
  • SP000395183
  • SP001127818