Infineon IPB64N25S320ATMA1

Name: Infineon IPB64N25S320ATMA1
Brand: Infineon
SKU: IPB64N25S320ATMA1

Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount

$ 3.45

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Avnet	2	13AC9030	458	1		7.480	7.480	7.480	7.480	7.480	12h
Newark	2	IPB64N25S320ATMA1	458	1	Cut Tape	7.480	7.480	7.480	7.480	7.480
Rochester Electronics		IPB64N25S320ATMA1	47,643					3.020	2.700	2.540	10h
DigiKey	3	IPB64N25S320ATMA1CT-ND	1,729	1	Cut Tape	9.080	6.139	4.477	3.769	3.769
Arrow Electronics	2	IPB64N25S320ATMA1	2,887	1		3.057	3.057	3.057	3.057	3.057

Inventory History

3 month trend: +3.10%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB64N25S320ATMA1.

IHS

Datasheet9 pages11 years ago

Inventory History

3 month trend:

+3.10%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPB64N25S320ATMA1

InfineonIPB200N25N3GATMA1

Price @ 1000

$ 3.45

$ 3.585

Stock

409,018

1,185,338

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263-3

TO-263

Drain to Source Voltage (Vdss)

250 V

Continuous Drain Current (ID)

64 A

Threshold Voltage

Rds On Max

20 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

7 nF

5.34 nF

Supply Chain

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-20

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPB64N25S320ATMA1 provided by its distributors.

Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount

EBV Elektronik

250V, N-Ch, 20 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Mosfet, N-Ch, 250V, 64A, 175Deg C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:64A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPB64N25S320ATMA1

Newark

Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection

Infineon