STMicroelectronics STB28NM50N
$ 3.32
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STB28NM50N | 3,000 | 1K | |||||||||
| Arrow Electronics | STB28NM50N | 3,000 | 1K | |||||||||
| DigiKey | 497-STB28NM50NCT-ND | 1,066 | 1 | Cut Tape | ||||||||
| TME | STB28NM50N | 0 | 1K | 17h | ||||||||
| Avnet | STB28NM50N | 0 | 1K | 6h |
Inventory History
3 month trend: -0.50%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB28NM50N.
CAD Models
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|---|---|---|---|
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Descriptions
Descriptions of STMicroelectronics STB28NM50N provided by its distributors.
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package
Power MOSFET, N Channel, 500 V, 21 A, 0.135 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) D2PAK T/R
150W(Tc) 25V 4V@ 250¦ÌA 50nC@ 10 V 1N 500V 158m¦¸@ 10.5A,10V 21A 1.735nF@25V D2PAK
N-Channel 500 V 20A 150 mOhm 140 W Surface Mount Power Mosfet - D2PAK
Power Field-Effect Transistor, 21A I(D), 500V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 500V, 21A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Mosfet, N Channel, 500V, 21A, To-263; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:21A; Tensión Drenaje-Fuente Vds:500V; Resistencia De Activación Rds(On):0.135Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB28NM50N
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.50%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance158 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.735 nF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation150 W
Rds On Max158 mΩ
Resistance135 mΩ
Rise Time19 ns
Threshold Voltage3 V
Turn-Off Delay Time62 ns
Turn-On Delay Time13.6 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB28NM50N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant