Infineon IPB081N06L3GATMA1
$ 0.605
Production
Inventory History
3 month trend: +5.89%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB081N06L3GATMA1.
CAD Models
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Supply Chain
Country of OriginMalaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-17
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
InfineonIPB057N06NATMA1
Power MOSFET, N Channel, 60 V, 45 A, 0.0049 ohm, TO-263 (D2PAK), Surface Mount
InfineonSPB18P06PGATMA1
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai
Descriptions
Descriptions of Infineon IPB081N06L3GATMA1 provided by its distributors.
In a Pack of 25, N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK Infineon IPB081N06L3GATMA1
Power MOSFET, N Channel, 60 V, 50 A, 0.0067 ohm, TO-263 (D2PAK), Surface Mount
Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +5.89%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Resistance8.1 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.7 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance8.4 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation79 W
Rise Time26 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time37 ns
Turn-On Delay Time15 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB081N06L3GATMA1.
Compliance
Environmental Classification
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Compliance Statements