Infineon IKW25N120T2FKSA1

Name: Infineon IKW25N120T2FKSA1
Brand: Infineon
SKU: IKW25N120T2FKSA1

IKW25N120T2 Series 1200 V 50 A Through Hole IGBT TrenchStop® - PG-TO-247-3

$ 3.04

NRND

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
DigiKey	IKW25N120T2FKSA1-ND	810	1	Tube	7.010	7.010	4.004	2.860	2.660
Newark	IKW25N120T2FKSA1	523	1		6.230	5.340	3.240	2.950	2.950
Arrow Electronics	IKW25N120T2FKSA1	203	1		6.996	6.996	3.996	3.338	3.338
Rutronik	IGBT2109	960	30				3.730	3.670	3.670	19h
Future Electronics	IKW25N120T2FKSA1	0	240	Tube				3.840	3.800

Inventory History

3 month trend: -19.07%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IKW25N120T2FKSA1.

IHS

Datasheet15 pages9 years ago

TME

element14 APAC

iiiC

Inventory History

3 month trend:

-19.07%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIKW25N120T2FKSA1

Price @ 1000

$ 3.04

Stock

527,416

Authorized Distributors

Mount

Case/Package

TO-247-3

Collector Emitter Breakdown Voltage

1.2 kV

Max Collector Current

50 A

Power Dissipation

349 W

Collector Emitter Saturation Voltage

2.2 V

Reverse Recovery Time

195 ns

Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-11-21

Lifecycle StatusNRND (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IKW25N120T2FKSA1 provided by its distributors.

IKW25N120T2 Series 1200 V 50 A Through Hole IGBT TrenchStop® - PG-TO-247-3

Future Electronics

1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Infineon SCT

Trans IGBT Chip N-CH 1200V 50A 349W Automotive 3-Pin(3+Tab) TO-247 Tube

Verical

IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:349W

element14 APAC

Hard-switching 1200 V, 25 A TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon