Infineon IGW40T120FKSA1

Name: Infineon IGW40T120FKSA1
Brand: Infineon
SKU: IGW40T120FKSA1

Infineon IGW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Farnell		IGW40T120FKSA1	0	1		6.310*	5.114*	4.406*	4.406*	4.406*	23h
Win Source	2	WS-460294	2,999	4			10.985	8.925	8.925	8.925	23h
Worldway Electronics		IGW40T120FKSA1	11,056	7	Tube		133.52	129.43	122.62	122.62	23h
IC Components Ltd.		IGW40T120	3,099			8.580	8.580	8.580	8.580	8.580	2d
Aztech		IGW40T120FKSA1	4,581			4.780	4.780	4.780	4.780	4.780	19h

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IGW40T120FKSA1.

IHS

Datasheet13 pages14 years ago

Burklin Elektronik

TME

iiiC

Inventory History

3 month trend:

-100%

CAD Models

Download Infineon IGW40T120FKSA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint
SnapEDA	Footprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-01-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-08-15

LTD Date2025-02-15

Related Parts

InfineonIKW40N120T2FKSA1

Trans IGBT Chip N-CH 1200V 75A 480000mW Automotive 3-Pin(3+Tab) TO-247 Tube

Details

InfineonIHW40T120FKSA1

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Details

onsemiNGTB40N120IHRWG

Trans IGBT Chip N-CH 1200V 120A 384000mW 3-Pin(3+Tab) TO-247 Tube

Details

LittelfuseIXGH32N120A3

Trans IGBT Chip N-CH 1200V 75A 300000mW 3-Pin(3+Tab) TO-247AD

Details

MicrochipAPT25GR120BD15

Igbt Mos 8 1200 V 25 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT25GR120BD15

Details

InfineonIRG4PH50SPBF

IRG4PH50S Series 1200 V 57 A N-Channel Standard Speed IGBT - TO-247AC

Details

Descriptions

Descriptions of Infineon IGW40T120FKSA1 provided by its distributors.

Infineon IGW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

TodayComponents

IGBT,1200V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:270W

Farnell

Infineon's 1200 V, 40 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

Infineon SCT

Configuration = Single / Continuous Collector Current (Ic) A = 40 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.7 / Emitter Leakage Current nA = 600 / Power Dissipation (Pd) W = 270 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

Distrelec

Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

Infineon