Infineon IHW40T120FKSA1

Name: Infineon IHW40T120FKSA1
Brand: Infineon
SKU: IHW40T120FKSA1

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

$ 4.23

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		IHW40T120FKSA1	2,290					4.730	4.230	3.980	13h
Farnell		IHW40T120	0	1		9.448*	9.448*	7.621*	6.149*	6.149*	13h
Microchip USA		IHW40T120FKSA1	2,523	600	Tube				4.984	4.984	1d
Verical		IHW40T120FKSA1	2,290	61				5.913	5.288	4.975
Win Source	2	WS-IHW40T120FKSA1	478	9			7.079	4.719	4.719	4.719	14h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IHW40T120FKSA1.

IHS

Datasheet14 pages17 years ago

iiiC

Inventory History

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-02-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-02-15

LTD Date2016-08-15

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Descriptions

Descriptions of Infineon IHW40T120FKSA1 provided by its distributors.

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Win Source

Transistor IGBT Chip N-Channel 1200V 75A 3-Pin TO-247

Avnet

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

IHS

IHW40T120 DISCRETE IGBT WITH ANTI-PARAL;

Farnell

75 A 1200 V N-CHANNEL IGBT TO-247AC

Component Stockers USA

IGBT TRENCH FS 1200V 75A TO247-3

DigiKey Marketplace

IGBT+ DIODE,1200V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; Operating Temperature Range:-40°C to +150°C; Power Dissipation Max:270W

element14 APAC