Infineon IKW40N120T2FKSA1

Name: Infineon IKW40N120T2FKSA1
Brand: Infineon
SKU: IKW40N120T2FKSA1

Trans IGBT Chip N-CH 1200V 75A 480000mW Automotive 3-Pin(3+Tab) TO-247 Tube

$ 3.766

NRND

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet	2	85X6005	30	1		7.870	6.770	4.190	3.820	3.820	3d
Newark		IKW40N120T2FKSA1	268	1		7.870	6.770	4.190	3.820	3.820
Arrow Electronics		IKW40N120T2FKSA1	2,673	1		3.766	3.766	3.766	3.766	3.766
Rochester Electronics		IKW40N120T2FKSA1	64					3.410	3.050	2.870	18h
DigiKey		IKW40N120T2FKSA1-ND	2,776	1	Tube	8.460	8.460	4.909	3.559	3.416

Inventory History

3 month trend: +11.30%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IKW40N120T2FKSA1.

IHS

Datasheet15 pages7 years ago

Newark

Farnell

_legacy Avnet

iiiC

Inventory History

3 month trend:

+11.30%

CAD Models

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Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-11-21

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

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Descriptions

Descriptions of Infineon IKW40N120T2FKSA1 provided by its distributors.

Trans IGBT Chip N-CH 1200V 75A 480000mW Automotive 3-Pin(3+Tab) TO-247 Tube

Verical

IGBT Transistors; INFINEON; IKW40N120T2; 1.2 kV; Single; 75 A; TO-247-3

Maritex

IKW40N120T2 Series 1200 V 75 A IGBT in 2nd Generation TrenchStop - TO-247-3

Future Electronics

1200 V, 40 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Infineon SCT

Infineon IKW40N120T2FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

TodayComponents

IGBT+ DIODE,1200V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.2V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:480W

element14 APAC

Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon