Infineon BSZ058N03MSGATMA1

Name: Infineon BSZ058N03MSGATMA1
Brand: Infineon
SKU: BSZ058N03MSGATMA1

Trans Mosfet N-ch 30V 14A 8-PIN Tsdson Ep T/r

$ 0.33

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSZ058N03MSGATMA1	44,752					0.397	0.330	0.294	16h
Farnell		BSZ058N03MSGATMA1	0	1		1.336*	1.336*	0.859*	0.600*	0.600*	2h
Microchip USA		BSZ058N03MSGATMA1	307	3500	Tray					0.400	1d
Verical	5	BSZ058N03MSGATMA1	25,289	839					0.412	0.368
Win Source	2	WS-BSZ058N03MSGATMA1	46,000	40				1.343	1.091	1.091	16h

Inventory History

3 month trend: -4.28%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSZ058N03MSGATMA1.

IHS

Datasheet9 pages15 years ago

Farnell

Inventory History

3 month trend:

-4.28%

CAD Models

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Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon BSZ058N03MSGATMA1 provided by its distributors.

Trans MOSFET N-CH 30V 14A 8-Pin TSDSON EP T/R

Verical

40 A 30 V 0.0064 ohm N-CHANNEL Si POWER MOSFET

Component Stockers USA

Power Field-Effect Transistor, 40A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

BSZ058N03 12V-300V N-CHANNEL POWER MOSF;

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MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:45W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

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