Infineon BSS126H6327XTSA2

Name: Infineon BSS126H6327XTSA2
Brand: Infineon
SKU: BSS126H6327XTSA2

Transistor: N-MOSFET; unipolar; 600V; 21mA; 700ohm; -55+150 deg.C; SMD; SOT23

$ 0.191

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		BSS126H6327XTSA2	126,000	3K						0.089	3h
Future Electronics	2	BSS126H6327XTSA2	1,008,000	3K	Tape & Reel					0.082
Arrow Electronics	3	BSS126H6327XTSA2	12,044	1		0.638	0.392	0.247	0.164	0.112
DigiKey	3	BSS126H6327XTSA2CT-ND	10,243	1	Cut Tape	0.770	0.475	0.303	0.205	0.205
Newark		BSS126H6327XTSA2	0	5			0.431	0.291	0.209	0.183

Inventory History

3 month trend: +16.57%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSS126H6327XTSA2.

Upverter

Datasheet9 pages13 years ago

IHS

Inventory History

3 month trend:

+16.57%

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Alternate Parts

This Part

Alternate Parts

InfineonBSS126H6327XTSA2

InfineonBSS126H6906XTSA1

Price @ 1000

$ 0.191

$ 0.304

Stock

4,414,502

2,313,510

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

21 mA

Threshold Voltage

Rds On Max

700 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

360 mW

500 mW

Input Capacitance

21 pF

Supply Chain

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date2011-06-30

Lifecycle StatusProduction (Last Updated: 1 month ago)

LTB Date2012-06-30

LTD Date2012-12-31

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Descriptions

Descriptions of Infineon BSS126H6327XTSA2 provided by its distributors.

Transistor: N-MOSFET; unipolar; 600V; 21mA; 700ohm; -55+150 deg.C; SMD; SOT23

Maritex

Power MOSFET, N Channel, 600 V, 21 mA, 500 Ohm, SOT-23, 3 Pins, Surface Mount

Avnet

Single N-Channel 600 V 500 Ohm 1.4 nC SIPMOS® Small Signal Mosfet - SOT-23

Future Electronics

Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R

Verical

SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N-CH, 600V, 21MA, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:21mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):280ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-2V; Power Dissipation Pd:500mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

Farnell

Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs.Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 60 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

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