Infineon AUIRFR120Z

Name: Infineon AUIRFR120Z
Brand: Infineon
SKU: AUIRFR120Z

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

$ 0.506

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	AUIRFR120Z	4,974				0.610	0.506	0.451	5h
RS (Formerly Allied Electronics)		AUIRFR120Z	0	3K	Bulk				0.810	21h
Farnell		AUIRFR120Z	0	5		1.144*	0.790*	0.520*	0.515*	5h
Verical		AUIRFR120Z	2,360	493				0.633	0.564
Win Source		WS-AUIRFR120Z	17,000	115				0.375	0.336	6h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRFR120Z.

IHS

Datasheet12 pages8 years ago

Datasheet14 pages15 years ago

Upverter

Farnell

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRFR120Z

InfineonIRFR120ZTRPBF

Price @ 1000

$ 0.506

$ 0.348

Stock

97,768

453,609

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

8.7 A

Threshold Voltage

2 V

Rds On Max

190 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

35 W

Input Capacitance

310 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-12-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-06-15

LTD Date2019-12-15

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Descriptions

Descriptions of Infineon AUIRFR120Z provided by its distributors.

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Infineon SCT

Single N-Channel 100 V 190 mOhm Auto Grade Power MosFet - TO-252-3

Future Electronics

AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Infineon

MOSFET,W DIODE,N CH,100V,8.7A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:20V

element14 APAC