Diodes Inc. ZVN4306A

Name: Diodes Inc. ZVN4306A
Brand: Diodes Inc.
SKU: ZVN4306A

N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92

$ 0.844

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		ZVN4306A	2,993	153					0.852	0.852
Verical		ZVN4306A	2,907	153					0.852	0.716
DigiKey		ZVN4306A-ND	4,407	1	Bulk	2.610	1.675	1.144	0.843	0.688
TME	2	ZVN4306A	3,256	1		2.399*	1.576*	1.078*	0.916*	0.916*	14h
Newark		ZVN4306A	0	1		2.440	1.680	1.240	1.060	1.010

Inventory History

3 month trend: +8.05%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZVN4306A.

Newark

Datasheet6 pages14 years ago

Datasheet3 pages19 years ago

IHS

Diodes Inc SCT

iiiC

Future Electronics

Inventory History

3 month trend:

+8.05%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.ZVN4306A

Diodes Inc.ZVN4306ASTZ

Price @ 1000

$ 0.844

$ 1.11

Stock

139,924

13,848

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

1.1 A

Threshold Voltage

3 V

Rds On Max

330 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

850 mW

Input Capacitance

350 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-01-01

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Diodes Inc. ZVN4306A provided by its distributors.

N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92

Future Electronics

Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line

Component Sense

Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes

Newark

Power Field-Effect Transistor, 1.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Rebound Electronics

MOSFET N-Channel 60V 1.1A (Ta) TO-226-3

ComSIT Distribution GmbH

N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

Diodes Inc SCT

DiodesZetex NMOS, Vds=60 V, 1.1 A, E-Line, , 3

UnikeyIC

MOSFET N-CHANNEL 60V 1.1A E-LINE

RS (Formerly Allied Electronics)

MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

element14 APAC