Inventory History
3 month trend: +59.99%
CAD Models
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Alternate Parts
1 part available
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.375
$ 0.955
$ 0.955
Stock
1,524,559
78,678
78,678
Authorized Distributors
6
5
5
Mount
Through Hole
Surface Mount, Through Hole
Surface Mount, Through Hole
Case/Package
TO-220AB
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
49 A
49 A
49 A
Threshold Voltage
2.1 V
2 V
2 V
Rds On Max
17.5 mΩ
17.5 mΩ
17.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
83 W
94 W
94 W
Input Capacitance
1.47 nF
1.47 nF
1.47 nF
Supply Chain
Country of OriginMainland China, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-31
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
InfineonIRFZ44ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg
InfineonIRLZ44ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 51A;TO-220AB;PD 80W;VGS +/-1
Descriptions
Descriptions of Infineon IRFZ44NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole
Transistor MOSFET N-Ch. 41A/55V TO220 IRFZ 44 NPBF
Trans MOSFET N-CH 55V 49A 3-Pin (3+Tab) TO-220AB T/R
55V 49A 94W 17.5m´Î@10V25A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 250 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:49A; On Resistance, Rds(on):17.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:49A; Current Temperature:25°C; Device Marking:IRFZ44NPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +59.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)49 A
Current Rating49 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation83 W
Rds On Max17.5 mΩ
Recovery Time95 ns
Resistance17.5 MΩ
Rise Time60 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2.1 V
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements