Infineon IRFZ44ZPBF

Name: Infineon IRFZ44ZPBF
Brand: Infineon
SKU: IRFZ44ZPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11.1 Milliohms; ID 51A; TO-220AB; PD 80W; -55deg

$ 0.733

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFZ44ZPBF	37	1		1.058	0.826	0.733	0.733	0.733
Rochester Electronics		IRFZ44ZPBF	700					0.552	0.458	0.408	18h
RS (Formerly Allied Electronics)		IRFZ44ZPBF	0	5	Bulk		1.270	1.120	1.120	1.120	7h
Farnell		IRFZ44ZPBF	0	1		1.212*	1.189*	1.124*	1.124*	1.124*	18h
Microchip USA	2	IRFZ44ZPBF	299	3500	Tube					0.361	2d

Inventory History

3 month trend: +116%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFZ44ZPBF.

Farnell

Datasheet13 pages15 years ago

IHS

Newark

Factory Futures

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+116%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFZ44ZPBF

InfineonAUIRFZ44Z

Price @ 1000

$ 0.733

$ 0.18

Stock

283,896

59,863

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

TO-220-3

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

51 A

Threshold Voltage

4 V

2 V

Rds On Max

13.9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

80 W

Input Capacitance

1.42 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-10-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-07-27

LTD Date2013-01-27

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Descriptions

Descriptions of Infineon IRFZ44ZPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg

RS (Formerly Allied Electronics)

Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W

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Trans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET, N, 55V, 51A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon