Vishay SI7489DP-T1-GE3
In Stock
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)-7.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation5.2 W
Rds On Max41 mΩ
Rise Time160 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time100 ns
Turn-On Delay Time15 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Inventory History
3 month trend: +36.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.595
$ 1.34
Stock
876,513
1,097,426
Authorized Distributors
13
12
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
-7.8 A
-7.8 A
Threshold Voltage
-3 V
-3 V
Rds On Max
41 mΩ
41 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
5.2 W
5.2 W
Input Capacitance
4.6 nF
4.6 nF
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI7489DP-T1-GE3.
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Descriptions
Descriptions of Vishay SI7489DP-T1-GE3 provided by its distributors.
Si7489DP Series 100 V 0.041 Ohm SMT P-Channel MOSFET - PowerPAK SO-8
P Channel Mosfet, -100V, 28A, Soic, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3Vrohs Compliant: No |Vishay SI7489DP-T1-GE3.
MOSFET, P CH, 100V, 28A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +36.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)-7.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation5.2 W
Rds On Max41 mΩ
Rise Time160 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time100 ns
Turn-On Delay Time15 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements