Vishay SI7450DP-T1-GE3
In Stock
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI7450DP-T1-GE3 | 11,813 | 1 | Tape & Reel | 1d | ||||||||
| SI7450DP-T1-GE3CT-ND | 5,385 | 1 | Cut Tape | 1d | ||||||||
| SI7450DP-T1-GE3 | 1,325 | 5 | 22h | |||||||||
| SI7450DP-T1-GE3 | 1,325 | 1 | Cut Tape | 1d | ||||||||
| 06R3239 | 1,539 | 5 | Cut Tape | 3h |
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Manufacturer Package IdentifierS17-0173-Single
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.9 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Inventory History
3 month trend: -7.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for Vishay SI7450DP-T1-GE3.
Future Electronics
iiiC
Farnell
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.306
$ 1.321
Stock
393,436
803,566
Authorized Distributors
12
9
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
-
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
3.2 A
3.2 A
Threshold Voltage
4.5 V
2 V
Rds On Max
80 mΩ
80 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.9 W
1.9 W
Input Capacitance
-
-
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI7450DP-T1-GE3.
Related Parts
InfineonIRF7820TRPBF
Single N-Channel 200 V 78 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8
InfineonIRF7820PBF
Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC
VishaySI7846DP-T1-E3
Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Descriptions
Descriptions of Vishay SI7450DP-T1-GE3 provided by its distributors.
Trans MOSFET N-CH 200V 5.3A 8-Pin PowerPAK SOIC
Single N-Channel 200 V 0.08 O 42 nC Surface Mount Power Mosfet - PowerPAK SO-8
N-CHANNEL 200-V (D-S) MOSFET Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N Ch Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.9W Rohs Compliant: No |Vishay SI7450DP-T1-GE3.
MOSFET,N CH,200V.3.2A,PPSO8; Transistor Polarity:N; Max Current Id:3.2A; Max Voltage Vds:200V; On State Resistance:5ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Case Style:SOIC PowerPAK; Cont Current Id:3.2A; Current Temperature:25°C; External Depth:5.26mm; External Length / Height:1.2mm; External Width:6.2mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Max Junction Temperature Tj:150°C; Max On State Resistance:0.080ohm; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:2V; N-channel Gate Charge:42nC; Power Dissipation Pd:1.9W; Pulse Current Idm:40A; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:200V; Typ Voltage Vgs th:4.5V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -7.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Manufacturer Package IdentifierS17-0173-Single
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.9 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI7450DP-T1-GE3.
Future Electronics
iiiC
Farnell
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements