Vishay SI7846DP-T1-E3

Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

Price and Stock

Distributor		SKU		MOQ	Pkg
Mouser		781-SI7846DP-E3	5,445	1	Tape & Reel	2.350	1.960	1.560	1.190	1.120	15h
Verical	2	SI7846DP-T1-E3	1,138	7			1.325	1.161	0.906	0.906	4d
Arrow Electronics		SI7846DP-T1-E3	1,138	1	Cut Tape	1.445	1.325	1.161	0.906	0.906	14h
Future Electronics	2	5156819	3,000	3K	Tape & Reel					0.835	4d
DigiKey	3	SI7846DP-T1-E3CT-ND	17,431	1	Cut Tape	2.350	1.954	1.555	1.117	1.117	5d

Technical Specifications

Physical

Case/PackageSOIC

MountSurface Mount

Number of Pins8

Weight506.605978 mg

Technical

Continuous Drain Current (ID)4 A

Drain to Source Breakdown Voltage150 V

Drain to Source Resistance50 mΩ

Drain to Source Voltage (Vdss)150 V

Dual Supply Voltage150 V

Element ConfigurationSingle

Fall Time7 ns

Gate to Source Voltage (Vgs)20 V

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation1.9 W

Min Operating Temperature-55 °C

Nominal Vgs4.5 V

Number of Channels1

Number of Elements1

Power Dissipation1.9 W

Rds On Max50 mΩ

Resistance50 mΩ

Rise Time7 ns

Schedule B8541290080

Threshold Voltage4.5 V

Turn-Off Delay Time22 ns

Turn-On Delay Time12 ns

Dimensions

Height1.04 mm

Length4.9 mm

Width5.89 mm

Inventory History

3 month trend: +9.57%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Documents

Download datasheets and manufacturer documentation for Vishay SI7846DP-T1-E3.

Farnell

Datasheet6 pages14 years ago

Datasheet12 pages11 years ago

Datasheet6 pages15 years ago

Datasheet12 pages8 years ago

Newark

Datasheet12 pages8 years ago

Datasheet6 pages17 years ago

Upverter

Technical Drawing1 page12 years ago

element14 APAC

Datasheet8 pages10 years ago

iiiC

Datasheet12 pages11 years ago

Arrow Electronics

Datasheet12 pages11 years ago

Mouser

Datasheet6 pages16 years ago

Inventory History

3 month trend:

+9.57%

Alternate Parts

This Part

Alternate Parts

VishaySI7846DP-T1-E3

VishaySI7846DP-T1-GE3

Price @ 1000

$ 0.906

$ 1.317

Stock

307,293

165,944

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

4 A

Threshold Voltage

4.5 V

Rds On Max

50 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

1.9 W

Input Capacitance

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI7846DP-T1-E3.

Related Parts

Descriptions

Descriptions of Vishay SI7846DP-T1-E3 provided by its distributors.

Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

Future Electronics

Trans MOSFET N-CH 150V 4A Automotive 8-Pin PowerPAK SO T/R / MOSFET N-CH 150V 4A PPAK SO-8

Win Source

N-CHANNEL 150-V (D-S) MOSFET Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET TRANSISTOR; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:24.5A; Package / Case:SOIC-8; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Mosfet, N Channel, 150V, 0.041Ohm, 4A, Powerpak So, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:1.9Wrohs Compliant: No |Vishay SI7846DP-T1-E3.

Newark