Vishay SI7450DP-T1-E3

SI7450DP-T1-E3 N-channel MOSFET Transistor; 3.2 A; 200 V; 8-Pin SOIC
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.2 A
Current Rating5.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Manufacturer Package IdentifierS17-0173_SINGLE
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.9 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)20 V
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7450DP-T1-E3.

Newark
Datasheet11 pages8 years ago
Datasheet11 pages11 years ago
Datasheet5 pages18 years ago
_legacy Avnet
Datasheet11 pages11 years ago
Datasheet5 pages15 years ago
Factory Futures
Datasheet5 pages14 years ago
Farnell
Datasheet7 pages10 years ago
Future Electronics
Datasheet11 pages10 years ago
iiiC
Datasheet11 pages11 years ago
Arrow Electronics
Datasheet11 pages11 years ago
Mouser
Datasheet5 pages16 years ago

Inventory History

3 month trend:
-3.83%

Alternate Parts

Price @ 1000
$ 1.244
$ 1.302
Stock
614,143
315,973
Authorized Distributors
10
12
Mount
Surface Mount
Surface Mount
Case/Package
-
SOIC
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
3.2 A
3.2 A
Threshold Voltage
2 V
4.5 V
Rds On Max
80 mΩ
80 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.9 W
1.9 W
Input Capacitance
-
-

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI7450DP-T1-E3.

Related Parts

Descriptions

Descriptions of Vishay SI7450DP-T1-E3 provided by its distributors.

SI7450DP-T1-E3 N-channel MOSFET Transistor; 3.2 A; 200 V; 8-Pin SOIC
Single N-Channel 200 V 1.9 W 42 nC Silicon Surface Mount Mosfet - POWERPAK-SO-8
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:5.2W

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI7450DP-T1-E3.

Technical Specifications

Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.2 A
Current Rating5.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Manufacturer Package IdentifierS17-0173_SINGLE
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.9 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)20 V
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI7450DP-T1-E3.

Newark
Datasheet11 pages8 years ago
Datasheet11 pages11 years ago
Datasheet5 pages18 years ago
_legacy Avnet
Datasheet11 pages11 years ago
Datasheet5 pages15 years ago
Factory Futures
Datasheet5 pages14 years ago
Farnell
Datasheet7 pages10 years ago
Future Electronics
Datasheet11 pages10 years ago
iiiC
Datasheet11 pages11 years ago
Arrow Electronics
Datasheet11 pages11 years ago
Mouser
Datasheet5 pages16 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago