Vishay SI2323DS-T1-E3

Si2323DS Series 20 V 3.7 A 39 mOhm Surface Mount P-Channel Mosfet - SOT-23-3
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.02 nF
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation750 mW
Rds On Max39 mΩ
Resistance39 mΩ
Rise Time43 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time71 ns
Turn-On Delay Time25 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2323DS-T1-E3.

Farnell
Datasheet9 pages11 years ago
Datasheet9 pages11 years ago
Datasheet6 pages14 years ago
Datasheet6 pages15 years ago
Newark
Datasheet9 pages8 years ago
Datasheet9 pages9 years ago
Datasheet6 pages18 years ago
TME
Datasheet9 pages8 years ago
iiiC
Datasheet9 pages11 years ago
Arrow Electronics
Datasheet9 pages11 years ago
RS (Formerly Allied Electronics)
Datasheet2 pages15 years ago

Inventory History

3 month trend:
+57.48%

Alternate Parts

Price @ 1000
$ 0.343
$ 0.105
$ 0.105
Stock
5,008,527
28,133,502
28,133,502
Authorized Distributors
13
12
12
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
20 V
-20 V
-20 V
Continuous Drain Current (ID)
3.7 A
-4.9 A
-4.9 A
Threshold Voltage
-1 V
-
-
Rds On Max
39 mΩ
35 mΩ
35 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
8 V
Power Dissipation
750 mW
810 mW
810 mW
Input Capacitance
1.02 nF
1.61 nF
1.61 nF

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2323DS-T1-E3.

Related Parts

Descriptions

Descriptions of Vishay SI2323DS-T1-E3 provided by its distributors.

Si2323DS Series 20 V 3.7 A 39 mOhm Surface Mount P-Channel Mosfet - SOT-23-3
MOSFET P-CH 20V 3.7A SOT23-3 / Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, Power, P-Ch, VDSS -20V, RDS(ON) 0.031Ohm, ID -3.7A, TO-236 (SOT-23),PD 0.75W | Siliconix / Vishay SI2323DS-T1-E3
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.7A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI2323DS-T1-E3.

Technical Specifications

Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance39 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.02 nF
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation750 mW
Rds On Max39 mΩ
Resistance39 mΩ
Rise Time43 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time71 ns
Turn-On Delay Time25 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2323DS-T1-E3.

Farnell
Datasheet9 pages11 years ago
Datasheet9 pages11 years ago
Datasheet6 pages14 years ago
Datasheet6 pages15 years ago
Newark
Datasheet9 pages8 years ago
Datasheet9 pages9 years ago
Datasheet6 pages18 years ago
TME
Datasheet9 pages8 years ago
iiiC
Datasheet9 pages11 years ago
Arrow Electronics
Datasheet9 pages11 years ago
RS (Formerly Allied Electronics)
Datasheet2 pages15 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago