Vishay SI2312BDS-T1-E3
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI2312BDS-E3 | 271,222 | 1 | Tape & Reel | 14h | ||||||||
| SI2312BDS-T1-E3 | 3,000 | 3K | 4d | |||||||||
| SI2312BDS-T1-E3 | 12,000 | 3K | 11h | |||||||||
| SI2312BDS-T1-E3 | 12,000 | 3K | 11h | |||||||||
| SI2312BDS-T1-E3CT-ND | 42,241 | 1 | Cut Tape | 14h |
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)8 V
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Nominal Vgs450 mV
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max31 mΩ
Resistance31 mΩ
Rise Time30 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage850 mV
Turn-Off Delay Time35 ns
Turn-On Delay Time9 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Inventory History
3 month trend: +30.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay SI2312BDS-T1-E3.
Farnell
element14
Upverter
iiiC
Jameco
element14 APAC
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2312BDS-T1-E3.
Related Parts
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Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
Diodes Inc. DMG2302U-7
N-Channel 20 V 90 mOhm Surface Mount Enhancement Mode Mosfet -SOT-23-3
Descriptions
Descriptions of Vishay SI2312BDS-T1-E3 provided by its distributors.
Transistor: N-MOSFET; unipolar; 20V; 3.9A; 0.031ohm; 0.75W; -55+150 deg.C; SMD; SOT23
Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23
VISHAY SILICONIX SI2312BDS-T1-E3 MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:3Pins RoHS Compliant: No
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2312; Current Id Max:5A; Package / Case:SOT-23; Power Dissipation Pd:750µW; Pulse Current Idm:15A; SMD Marking:M2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +30.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)8 V
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Nominal Vgs450 mV
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max31 mΩ
Resistance31 mΩ
Rise Time30 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage850 mV
Turn-Off Delay Time35 ns
Turn-On Delay Time9 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI2312BDS-T1-E3.
Farnell
element14
Upverter
iiiC
Jameco
element14 APAC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements