Vishay SI2307CDS-T1-GE3
In Stock
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)-2.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance73 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.1 W
Rds On Max88 mΩ
Resistance88 MΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time17 ns
Turn-On Delay Time5.5 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Inventory History
3 month trend: -14.79%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for Vishay SI2307CDS-T1-GE3.
Future Electronics
TME
RS (Formerly Allied Electronics)
iiiC
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.184
$ 0.196
Stock
3,884,490
853,878
Authorized Distributors
14
7
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
-2.7 A
-2.7 A
Threshold Voltage
-3 V
-
Rds On Max
88 mΩ
88 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.1 W
1.1 W
Input Capacitance
340 pF
340 pF
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2307CDS-T1-GE3.
Related Parts
VishaySI2307BDS-T1-GE3
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Single N-Channel 30 V 0.07 Ohm 0.75 W Surface Mount Power Mosfet - SOT-23-3
VishaySI2306BDS-T1-GE3
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
Descriptions
Descriptions of Vishay SI2307CDS-T1-GE3 provided by its distributors.
Single P-Channel 30 V 88 mOhms Surface Mount Power Mosfet - SOT-23-3
Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
P CHANNEL MOSFET, -30V, 2.7A TO-236, FUL; P CHANNEL MOSFET, -30V, 2.7A TO-236, FULL REEL; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.7A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.138ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: -3V
MOSFET, P-CH, 30V, 3.5A, SOT23; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):73mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.5A; Power Dissipation Pd:1.1W; Voltage Vgs Max:20V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -14.79%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)-2.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance73 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.1 W
Rds On Max88 mΩ
Resistance88 MΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time17 ns
Turn-On Delay Time5.5 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI2307CDS-T1-GE3.
Future Electronics
TME
RS (Formerly Allied Electronics)
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements