Vishay SI2304BDS-T1-GE3
In Stock
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI2304BDS-T1-GE3 | 427,866 | 1 | Tape & Reel | 1d | ||||||||
| SI2304BDS-T1-GE3 | 6,000 | 3K | 18h | |||||||||
| SI2304BDS-T1-GE3CT-ND | 90,842 | 1 | Cut Tape | 1d | ||||||||
| SI2304BDS-T1-GE3 | 3,000 | 3K | 18h | |||||||||
| SI2304BDS-T1-GE3 | 3,000 | 3K | 1d |
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance225 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max70 mΩ
Resistance70 mΩ
Rise Time12.5 ns
Schedule B8541290080
Threshold Voltage2.25 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7.5 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Inventory History
3 month trend: -4.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for Vishay SI2304BDS-T1-GE3.
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.167
$ 0.175
Stock
1,011,598
2,022,985
Authorized Distributors
10
12
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
2.6 A
2.6 A
Threshold Voltage
2.25 V
1.5 V
Rds On Max
70 mΩ
70 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
750 mW
750 mW
Input Capacitance
225 pF
225 pF
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2304BDS-T1-GE3.
Related Parts
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VishaySI2316BDS-T1-GE3
Si2316BDS Series N-Channel 30 V 50 mOhm 1.66 W Surface Mount Mosfet - TO-236
VishaySI2307BDS-T1-GE3
Si2307BDS Series 30 V 2.5 A Surface Mount P-Channel Mosfet - SOT-23-3 (TO-236)
Descriptions
Descriptions of Vishay SI2304BDS-T1-GE3 provided by its distributors.
Single N-Channel 30 V 0.07 Ohm 0.75 W Surface Mount Power Mosfet - SOT-23-3
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R
30V 3.2A 750mW 70m´Î@10V2.5A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
N CHANNEL MOSFET, 30V, 3.2A, TO-236; Tra; N CHANNEL MOSFET, 30V, 3.2A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -4.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance225 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max70 mΩ
Resistance70 mΩ
Rise Time12.5 ns
Schedule B8541290080
Threshold Voltage2.25 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7.5 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI2304BDS-T1-GE3.
_legacy Avnet
Future Electronics
Farnell
iiiC
Upverter
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements