Vishay SIHD7N60E-GE3

Name: Vishay SIHD7N60E-GE3
Brand: Vishay
SKU: SIHD7N60E-GE3

VISHAY SIHD7N60E-GE3 Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V

$ 1.007

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Distributor		SKU		Min	Pkg
Newark		SIHD7N60E-GE3	3,300	1		2.820	1.830	1.330	1.020	1.020
DigiKey		SIHD7N60E-GE3-ND	30	1	Bulk	2.930	1.895	1.303	0.968	0.813
TTI		SIHD7N60E-GE3	2,950	50	Tube			0.780	0.744	0.744	7h
TME	2	SIHD7N60E-GE3	0	1		3.006*	2.051*	1.521*	1.509*	1.509*	20h
Avnet		SIHD7N60E-GE3	0	3K						0.797	8h

Inventory History

3 month trend: -1.72%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SIHD7N60E-GE3.

Newark

Datasheet11 pages6 years ago

Datasheet10 pages10 years ago

Datasheet9 pages11 years ago

Farnell

Inventory History

3 month trend:

-1.72%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-06-06

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SIHD7N60E-GE3 provided by its distributors.

VISHAY SIHD7N60E-GE3 Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V

Fly-Wing Technology

POWER MOSFET Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N-CH, 600V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

Farnell