onsemi FCD7N60TM

Name: onsemi FCD7N60TM
Brand: onsemi
SKU: FCD7N60TM

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK

$ 1.4

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Distributor		SKU		Min	Pkg
Newark	2	FCD7N60TM	765	5	Cut Tape		2.400	1.790	1.570	1.570
Verical		FCD7N60TM	2,040	223					1.400	1.249
Rochester Electronics		FCD7N60TM	2,040					1.350	1.120	0.999	1d
DigiKey	3	FCD7N60TMCT-ND	6,558	1	Cut Tape	3.410	2.215	1.536	1.216	1.216
Onlinecomponents.com		FCD7N60TM	0	625	Bulk				2.066	0.986

Inventory History

3 month trend: +3.95%

CAD Models

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Alternate Parts

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Datasheets & Documents

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Newark

Datasheet0 pages0 years ago

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IHS

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

+3.95%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-07-12

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FCD7N60TM provided by its distributors.

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK

onsemi

N-Channel 600 V 0.6 Ohm Surface Mount SuperFET Mosfet - TO-252-3

Future Electronics

Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N, 600V D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:7A; Package / Case:DPAK; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:21A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor