Vishay SI7106DN-T1-GE3

Name: Vishay SI7106DN-T1-GE3
Brand: Vishay
SKU: SI7106DN-T1-GE3

SI7106DN Series N-Channel 20 V 0.0062 Ohm Power MosFet SMT - POWERPAK-1212-8

$ 1.076

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
DigiKey	2	SI7106DN-T1-GE3CT-ND	2,816	1	Cut Tape	3.100	2.010	1.386	1.071	1.071
TTI		SI7106DN-T1-GE3	6,000	3K	Tape & Reel					0.880	3h
TME	2	SI7106DN-T1-GE3	0	3K						1.340	1d
Newark	2	SI7106DN-T1-GE3	0	3K	Tape & Reel					0.896
Future Electronics		SI7106DN-T1-GE3	0	3K	Tape & Reel					1.020

Inventory History

3 month trend: -0.02%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI7106DN-T1-GE3.

Newark

Datasheet6 pages16 years ago

Datasheet6 pages17 years ago

iiiC

Inventory History

3 month trend:

-0.02%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI7106DN-T1-GE3

VishaySI7106DN-T1-E3

Price @ 1000

$ 1.076

$ 1.03

Stock

205,326

739,236

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

12.5 A

Threshold Voltage

1.5 V

Rds On Max

6.2 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

1.5 W

Input Capacitance

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-14

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI7106DN-T1-GE3 provided by its distributors.

SI7106DN Series N-Channel 20 V 0.0062 Ohm Power MosFet SMT - POWERPAK-1212-8

Future Electronics

Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 20V 12.5A 1212-8

Win Source

1.5W(Ta) 12V 1.5V@ 250¦ÌA 27nC@ 4.5 V 1N 20V 6.2m¦¸@ 19.5A,4.5V 12.5A 1212 3.3mm*3.3mm*1.04mm

UnikeyIC

N-CH 20-V (D-S) FAST SWITCHING MOSFET

Vishay

Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET 20V 19.5A 3.8W 6.2mohm @ 4.5V

Fly-Wing Technology

MOSFET, N, PPAK1212; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.6V

element14 APAC