Vishay SI2312BDS-T1-GE3

Name: Vishay SI2312BDS-T1-GE3
Brand: Vishay
SKU: SI2312BDS-T1-GE3

Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3

$ 0.306

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
TME	2	SI2312BDS-T1-GE3	0	3		0.501*	0.398*	0.358*	0.333*	19h
TTI		SI2312BDS-T1-GE3	0	3K	Tape & Reel					2d
Newark		SI2312BDS-T1-GE3	0	3K	Tape & Reel
TTI Asia		SI2312BDS-T1-GE3	Contact						0.187	2d
Avnet		SI2312BDS-T1-GE3	0	3K						2d

Inventory History

3 month trend: -6.77%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2312BDS-T1-GE3.

Upverter

Datasheet7 pages5 years ago

Newark

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Farnell

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Inventory History

3 month trend:

-6.77%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI2312BDS-T1-GE3

Diodes Inc.DMG3414U-7

Price @ 1000

$ 0.306

$ 0.224

Stock

1,511,477

2,421,573

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23-3

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

3.9 A

4.2 A

Threshold Voltage

8 V

Rds On Max

31 mΩ

25 mΩ

Gate to Source Voltage (Vgs)

8 V

Power Dissipation

750 mW

780 mW

Input Capacitance

829.9 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-01-24

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-02-13

LTD Date2025-08-13

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Single N-Channel 20 V 0.033 Ohms Surface Mount Power Mosfet - SOT-23

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VishaySI2333DS-T1-E3

Single P-Channel 12 V 0.032 Ohms Surface Mount Power Mosfet - SOT-23

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Descriptions

Descriptions of Vishay SI2312BDS-T1-GE3 provided by its distributors.

Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3

Future Electronics

Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R

Verical

N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:30ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V

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