Vishay SI2333DS-T1-E3

Name: Vishay SI2333DS-T1-E3
Brand: Vishay
SKU: SI2333DS-T1-E3

Single P-Channel 12 V 0.032 Ohms Surface Mount Power Mosfet - SOT-23

$ 0.444

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
CoreStaff		ST63699856	2	1		0.715	0.715	0.500	0.444	0.439	1h
Newark		SI2333DS-T1-E3	0	3K	Tape & Reel
Avnet		SI2333DS-T1-E3	0	3K							2d
TTI Asia		SI2333DS-T1-E3	Contact								2d
Farnell	2	SI2333DS-T1-E3	0	1	Cut Tape	1.271*	0.829*	0.631*	0.486*	0.472*	7h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2333DS-T1-E3.

Newark

Datasheet8 pages5 years ago

Datasheet9 pages11 years ago

Datasheet6 pages19 years ago

Farnell

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Future Electronics

iiiC

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI2333DS-T1-E3

ROHMRQ5A040ZPTL

Price @ 1000

$ 0.444

$ 0.345

Stock

295,415

322,190

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-236

Drain to Source Voltage (Vdss)

-12 V

Continuous Drain Current (ID)

4.1 A

4 A

Threshold Voltage

-1 V

Rds On Max

32 mΩ

Gate to Source Voltage (Vgs)

8 V

Power Dissipation

750 mW

Input Capacitance

1.1 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-12-02

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-02-13

LTD Date2025-08-13

Related Parts

VishaySI2365EDS-T1-GE3

Power MOSFET, P Channel, 20 V, 5.9 A, 0.0265 ohm, SOT-23, Surface Mount

Details

VishaySI2333CDS-T1-E3

MOSFET, P CH, -12V, -7.1A, TO-236-3; Transistor Polarity:P Channel; Continuous D

Details

VishaySI2314EDS-T1-E3

Single N-Channel 20 V 0.033 Ohms Surface Mount Power Mosfet - SOT-23

Details

Descriptions

Descriptions of Vishay SI2333DS-T1-E3 provided by its distributors.

Single P-Channel 12 V 0.032 Ohms Surface Mount Power Mosfet - SOT-23

Future Electronics

MOSFET, POWER, P-CH, VDSS -12V, RDS(ON) 0.025OHM, ID -4.1A, TO-236 (SOT-23),PD 0.75W

RS (Formerly Allied Electronics)

12V 4.1A 750mW 32m´Î@4.5V5.3A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R

Verical

Power Field-Effect Transistor, 4.1A I(D), 12V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

IHS

MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.1A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V

element14 APAC