Texas Instruments CSD17559Q5T

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm 8-VSON-CLIP -55 to 150
$ 1.79
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Texas Instruments CSD17559Q5T.

Texas Instruments

Technical Drawing4 pages2 years ago
Official datasheet0 pages0 years ago
Technical Drawing2 pages2 years ago
Datasheet12 pages11 years ago
Datasheet12 pages11 years ago
Technical Drawing2 pages14 years ago

Inventory History

3 month trend:
-1.16%

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Alternate Parts

Price @ 1000
$ 1.79
$ 1.33
Stock
220,211
600,162
Authorized Distributors
2
5
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
-
30 V
Continuous Drain Current (ID)
257 A
100 A
Threshold Voltage
-
1.4 V
Rds On Max
-
1.15 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
-
3.2 W
Input Capacitance
-
9.2 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)

Engineering Resources

View Evaluation kits and Reference designs for Texas Instruments CSD17559Q5T.

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Descriptions

Descriptions of Texas Instruments CSD17559Q5T provided by its distributors.

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm 8-VSON-CLIP -55 to 150
This 30 V, 0.95 m, 56 mm SON NexFET power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 40 A; Peak Reflow Temperature (C): 260;

Manufacturer Aliases

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